HiCz™ Equipment

Enabling a critical market shift to higher efficiencies at lower costs than today’s batch CZ. 

GT is developing a HiCz™ furnace for p-type and n-type monocrystalline growth based on the proprietary continuously-fed growth technology acquired from Confluence Solar in August 2011. The HiCz™ furnace is expected to deliver significant improvements in cost, yield and quality over today’s batch CZ tools.

HiCz™ features  include:

• Simultaneous feeding, growing, doping
• High growth rates
• “Unlimited” charge size
• Stable hot zone and thermal conditions
• p-type and n-type growth capability
  

HiCz™ key benefits:

• Higher yield: more useable crystal per kg of silicon
• Higher throughput: more useable crystal per hour
• Uniform interstitial oxygen 
• Higher and more uniform minority carrier lifetime
• Uniform resistivity independent of dopant
• Lower hot zone costs per kilogram of ingot

HiCz™ pullers are currently in operation in GT’s facility in Merrimack, NH.